V23990ꢀP590ꢀJ09ꢀPM / V23990ꢀP590ꢀJ19ꢀPM /
V23990ꢀP600ꢀI09ꢀPM / V23990ꢀP600ꢀI19ꢀPM
datasheet
Brake Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
16
16
Qr
Q
Q
Q
Q
Q
Q
Q
Q
Qr
12
8
12
8
4
4
0
0
At
0
20
40
60
80
100
120
140
160
0
5
10
15
20
25
30
35
Rgon (Ω)
IC (A)
600
±15
4
V
V
ꢂ
600
±15
75
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
:
125 °C
125 °C
=
T j
=
T j
=
=
Figure 11.
FWD
Figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
80
80
I
I
I I
I I
I
I
IRM
60
40
20
0
60
40
20
0
IRM
0
5
10
15
20
25
30
35
Rgo n (Ω)
0
20
40
60
80
100
120
140
160
IC (A)
600
±15
4
V
V
ꢂ
600
±15
75
V
V
A
At
VCE
=
At
VCE =
:
:
125 °C
125 °C
VGE
=
=
T j
VGE
I C
=
T j
R gon
=
Copyright Vincotech
14
14 Aug. 2015 / Revision 2
VINCOTECH [ VINCOTECH ]
