V23990-P589-A31-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
VCE [V] or
IF [A] or
ID [A]
Tj
Min
Max
VGS [V]
VDS [V]
Brc Transistor
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5.8
6.5
2.2
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl. diode
Gate-emitter leakage current
Integrated gate resistor
Turn-on delay time
VCE=VGE
0.0005
15
V
V
1.6
1.88
2.30
15
0
0.005
200
1200
0
mA
nA
Ω
20
-
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
87
87
24
Rise time
28
ns
194
256
77
102
0.95
1.29
0.82
1.17
td(off)
tf
Turn-off delay time
Rgon=32Ω
Rgoff=32Ω
±15
600
15
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
900
Coss
Crss
QGate
RthJH
RthJC
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
80
Reverse transfer capacitance
Gate charge
55
Vcc=960V
±15
15
120
1.8
N/A
nC
Thermal grease
thickness≤50μm
λ=0.61W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
K/W
Brc Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1.3
1.85
1.76
2.2
5
VF
Ir
Diode forward voltage
10
10
V
μA
Reverse leakage current
±15
±15
600
600
10
12
IRRM
trr
Peak reverse recovery current
Reverse recovery time
A
324
489
1.38
2.27
46
46
0.58
0.96
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Rgon=32Ω
10
μC
di(rec)max
/dt
A/μs
mWs
Erec
RthJH
RthJC
Thermal grease
thickness≤50μm
λ=0.61W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
3.28
N/A
K/W
Thermistor
Tj=25°C
Tj=125°C
20.9
22
0.75
23.1
0.3
Rated resistance
Operating current
Power dissipation
B-value
R
kΩ
mA
mW
K
I
P
Tj=25°C
Tj=25°C
Tj=25°C
200
B(25/50)
Tol. ±3%
3950
copyright Vincotech
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