V23990-P589-A31-PM
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
DC forward current
1200
21
V
A
Tj=Tjmax
Th=80°C
Th=80°C
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per diode
Maximum junction temperature
50
A
37
W
°C
Tjmax
175
Brc Transistor
1200
VCE
IC
Collector-emitter break down voltage
DC collector current
V
A
Tj=Tjmax
Th=80°C
Th=80°C
15
45
ICpuls
Ptot
VGE
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
A
39
W
V
±20
tSC
Tj≤150°C
10
μs
VCC
VGE=15V
800
V
Tjmax
Maximum junction temperature
175
°C
Brc Diode
1200
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
DC forward current
V
A
Tj=Tjmax
Th=80°C
Th=80°C
10
20
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per diode
Maximum junction temperature
A
21
W
°C
Tjmax
175
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12.7
min 12.7
mm
mm
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