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V23990-P587-X2X-D2-14 参数 Datasheet PDF下载

V23990-P587-X2X-D2-14图片预览
型号: V23990-P587-X2X-D2-14
PDF下载: 下载PDF文件 查看货源
内容描述: [Industrial drives Embedded drives]
分类和应用:
文件页数/大小: 23 页 / 1391 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P587-*2*-PM  
Characteristic Values  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
Vr [V] or  
VGE [V] or  
IC [A] or  
IF [A] or  
VCE [V] or  
Tj  
Min  
Max  
VGS [V]  
VDS [V]  
ID [A]  
Brake Transistor  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
5
5,8  
6,5  
VGE(th)  
VCE(sat)  
ICES  
IGES  
Rgint  
td(on)  
tr  
VCE=VGE  
Gate emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off incl diode  
Gate-emitter leakage current  
Integrated Gate resistor  
Turn-on delay time  
0,0008  
50  
V
V
1,05  
1,50  
1,71  
1,85  
15  
0
0,04  
1
600  
600  
0
mA  
nA  
20  
-
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
162  
164  
9
Rise time  
11  
ns  
351  
393  
83  
108  
0,161  
0,223  
0,478  
0,560  
td(off)  
tf  
Turn-off delay time  
Rgoff=16 ꢀ  
Rgon=16 ꢀ  
±15  
300  
50  
Fall time  
Eon  
Turn-on energy loss per pulse  
Turn-off energy loss per pulse  
Input capacitance  
mWs  
pF  
Eoff  
Cies  
Coss  
Crss  
QGate  
3140  
200  
93  
Output capacitance  
f=1MHz  
0
25  
Tj=25°C  
Tj=25°C  
Reverse transfer capacitance  
Gate charge  
310  
nC  
Thermal grease  
thickness50um  
λ = 1 W/mK  
RthJH  
K/W  
Thermal resistance chip to heatsink per chip  
Thermal resistance chip to heatsink per chip  
1,497  
1,27  
Preapplied  
Phase change  
material  
RthJH  
K/W  
Brake Diode  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
1,25  
1,45  
1,30  
1,95  
27  
VF  
Ir  
Diode forward voltage  
20  
20  
V
A  
Reverse leakage current  
Peak reverse recovery current  
Reverse recovery time  
600  
300  
17  
20  
22  
IRRM  
trr  
A
ns  
Rgon=16 ꢀ  
Rgon=16 ꢀ  
145  
0,46  
0,46  
2451  
1404  
0,084  
0,171  
Qrr  
Reverse recovered charge  
Peak rate of fall of recovery current  
Reverse recovery energy  
15  
µC  
di(rec)max  
/dt  
A/µs  
mWs  
Erec  
Thermal grease  
thickness50um  
λ = 1 W/mK  
RthJH  
K/W  
K/W  
Thermal resistance chip to heatsink per chip  
Thermal resistance chip to heatsink per chip  
3,41  
2,97  
Preapplied  
Phase change  
material  
RthJH  
Thermistor  
Rated resistance  
Deviation of R25  
Power dissipation  
Power dissipation constant  
B-value  
R
R/R  
P
Tj=25°C  
Tj=25°C  
Tj=25°C  
Tj=25°C  
Tj=25°C  
Tj=25°C  
Tj=25°C  
22000  
%
-5  
5
200  
2
mW  
mW/K  
K
B(25/50)  
Tol. ±3%  
3950  
3996  
B(25/100)  
B-value  
K
Vincotech NTC Reference  
B
copyright Vincotech  
4
Revision: 2  
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