V23990-P587-*2*-PM
Output Inverter
Figure 17
Output inverter FWD
Figure 18
Output inverter FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
3200
6000
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
5000
4000
3000
2000
1000
0
2400
1600
800
0
0
5
10
15
20
25
30
35
)
I C (A)
R gon
(
Ω
0
50
100
150
At
At
Tj =
VCE
VGE
Tj =
°C
V
°C
V
A
V
25/125
25/125
300
=
=
VR =
300
±15
8
IF =
VGE
V
75
Rgon
=
=
ꢀ
±15
Figure 19
Output inverter IGBT
Figure 20
Output inverter FWD
IGBT transient thermal impedance
as a function of pulse width
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
Z
thJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
10-5
10-4
10-3
10-2
10-1
100
1011
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
At
At
tp / T
1,06
Phase change material
RthJH = 0,89
tp / T
1,51
Phase change material
RthJH = 1,27 K/W
D =
RthJH
D =
=
RthJH =
K/W
K/W
K/W
IGBT thermal model values
Phase change material
FWD thermal model values
Thermal grease Phase change material
Thermal grease
R (C/W)
0,08
Tau (s)
R (C/W)
3,26
Tau (s)
3,9E+00
5,3E-01
1,4E-01
1,5E-02
9,3E-04
R (C/W)
0,09
Tau (s)
R (C/W)
3,32
Tau (s)
3,9E+00
5,0E-01
1,2E-01
1,9E-02
2,6E-03
2,9E-04
3,9E+00
5,3E-01
1,4E-01
1,5E-02
9,3E-04
3,9E+00
5,0E-01
1,2E-01
1,9E-02
2,6E-03
2,9E-04
0,31
0,45
0,41
0,43
0,57
0,11
0,60
0,11
0,16
0,01
0,29
0,02
0,04
0,00
0,06
0,00
0,07
0,00
copyright Vincotech
9
Revision: 2
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