V23990-P585-*2*-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
ID [A]
Brake Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,25
1,43
1,29
1,95
27
VF
Ir
Diode forward voltage
20
20
V
ꢁA
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
600
300
10
11
28
IRRM
trr
A
ns
Rgon=32 ꢀ
Rgon=32 ꢀ
134
0,29
0,29
1247
443
0,051
0,100
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
-15
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
K/W
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
3,53
3,07
Preapplied
Phase change
material
RthJH
Thermistor
Rated resistance
Deviation of R25
Power dissipation
Power dissipation constant
B-value
R
∆R/R
P
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
22000
ꢀ
%
-5
5
200
2
mW
mW/K
K
B(25/50)
Tol. ±3%
3950
3996
B(25/100)
B-value
K
Vincotech NTC Reference
B
copyright Vincotech
5
Revision: 2
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