V23990-P585-*2*-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
ID [A]
Inverter Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,25
1,75
1,70
29
34
35
183
1,20
2,16
2200
1576
0,23
0,45
1,95
VF
IRRM
trr
Diode forward voltage
30
30
V
A
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=16 ꢀ
-15
300
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
K/W
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
2,07
1,78
Preapplied
Phase change
material
RthJH
Brake Transistor
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
1,9
VGE(th) VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,00029
20
V
V
1,1
1,55
1,75
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,04
1
300
600
0
mA
nA
ꢀ
20
-
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
126
128
18
Rise time
21
ns
161
179
105
114
0,44
0,59
0,49
0,63
td(off)
Turn-off delay time
Rgoff=32 ꢀ
±15
300
20
Rgon=32 ꢀ
tf
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
1100
Output capacitance
f=1MHz
0
25
20
20
Tj=25°C
Tj=25°C
71
Reverse transfer capacitance
Gate charge
32
15
480
120
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
2,12
1,83
Preapplied
Phase change
material
RthJH
K/W
copyright Vincotech
4
Revision: 2
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