V23990-P545-*3*-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
Brake Transistor
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
1,9
VGE(th) VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,00021
15
V
V
1,1
1,64
1,86
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0,00085
300
0
600
0
mA
nA
ꢀ
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
15
14
11
Rise time
14
ns
128
145
91
td(off)
tf
Turn-off delay time
Rgoff=8 ꢀ
Rgon=16 ꢀ
±15
300
15
Fall time
94
0,20
0,28
0,32
0,40
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
860
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
55
Reverse transfer capacitance
Gate charge
24
±15
480
15
87
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,55
K/W
Brake Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,25
1,86
1,75
1,95
27
VF
Ir
Diode forward voltage
15
15
V
ꢁA
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Rgon=16 ꢀ
Rgon=16 ꢀ
600
300
14
15
IRRM
trr
A
128
201
0,52
0,52
1307
657
0,10
0,21
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
±15
µC
A/µs
mWs
di(rec)max
/dt
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
3,35
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
Tj=25°C
Tc=100°C
Tc=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
22000
ꢀ
%
∆R/R R100=1486 ꢀ
-5
5
P
210
3,5
mW
mW/K
K
B(25/50)
Tol. ±3%
Tol. ±3%
B(25/100)
B-value
4000
K
Vincotech NTC Reference
A
copyright Vincotech
4
Revision: 4