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V23990-P545-A39-PM 参数 Datasheet PDF下载

V23990-P545-A39-PM图片预览
型号: V23990-P545-A39-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Industrial drives Embedded drives]
分类和应用:
文件页数/大小: 23 页 / 898 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P545-*3*-PM  
Characteristic Values  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
Vr [V] or  
VGE [V] or  
IC [A] or  
IF [A] or  
ID [A]  
VCE [V] or  
Tj  
Min  
Max  
VGS [V]  
VDS [V]  
Input Rectifier Diode  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=150°C  
0,8  
1,16  
1,13  
0,90  
0,78  
8
1,6  
VF  
Vto  
rt  
Forward voltage  
30  
30  
30  
V
V
Threshold voltage (for power loss calc. only)  
Slope resistance (for power loss calc. only)  
Reverse current  
m  
mA  
11  
Ir  
1500  
2
Thermal grease  
RthJH  
Thermal resistance chip to heatsink per chip  
thickness50um  
λ = 1 W/mK  
1,89  
K/W  
Inverter Transistor  
Gate emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current incl. Diode  
Gate-emitter leakage current  
Integrated Gate resistor  
Turn-on delay time  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
5
1
5,8  
6,5  
2,2  
VGE(th) VCE=VGE  
0,00029  
20  
V
V
1,55  
1,75  
VCE(sat)  
ICES  
IGES  
Rgint  
td(on)  
tr  
15  
0
0,0011  
300  
600  
0
mA  
nA  
20  
none  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
15  
14  
12  
Rise time  
16  
ns  
198  
212  
100  
104  
0,31  
0,43  
0,55  
0,65  
td(off)  
tf  
Turn-off delay time  
Rgoff=8 ꢀ  
Rgon=16 ꢀ  
±15  
300  
20  
Fall time  
Eon  
Turn-on energy loss per pulse  
Turn-off energy loss per pulse  
Input capacitance  
mWs  
pF  
Eoff  
Cies  
Coss  
Crss  
QGate  
1100  
Output capacitance  
f=1MHz  
0
25  
Tj=25°C  
Tj=25°C  
71  
Reverse transfer capacitance  
Gate charge  
32  
±15  
480  
20  
120  
nC  
Thermal grease  
thickness50um  
λ = 1 W/mK  
RthJH  
Thermal resistance chip to heatsink per chip  
2,01  
K/W  
Inverter Diode  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
1,25  
1,81  
1,76  
19  
21  
33  
192  
0,45  
1,35  
1454  
1052  
0,06  
0,27  
1,95  
VF  
IRRM  
trr  
Diode forward voltage  
20  
20  
V
A
Peak reverse recovery current  
Reverse recovery time  
ns  
Qrr  
Reverse recovered charge  
Peak rate of fall of recovery current  
Reverse recovered energy  
Rgon=16 ꢀ  
±15  
300  
µC  
di(rec)max  
/dt  
A/µs  
mWs  
Erec  
Thermal grease  
thickness50um  
λ = 1 W/mK  
RthJH  
Thermal resistance chip to heatsink per chip  
2,63  
K/W  
copyright Vincotech  
3
Revision: 4