V23990-P545-A39/C39-PM
final datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VCE(V) or
VDS(V)
VGE(V) or
VGS(V)
IC(A) or IF(A)
or ID(A)
T(C°)
Min
Max
Transistor BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
VCE=VGE
0.21m
15
V
V
1,64
1,86
15
0
0,04
350
600
0
mA
nA
20
none
Ohm
ns
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
13,5
13,8
202
Rise time
ns
td(off)
tf
Turn-off delay time
ns
Rgon=16 ꢃ
Rgoff=8 ꢃ
Fall time
ns
101,1
0,28
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
ꢀWs
ꢀWs
nF
Eoff
0,41
0,86
Cies
Coss
Crss
QGate
RthJH
RthJC
0,055
0,024
87
Output capacitance
f=1MHz
0
25
nF
Reverse transfer capacitance
Gate charge
nF
VCC=480V
15
15
15
nC
K/W
K/W
Thermal grease
thicknessꢁ50um ꢂ
= 0,61 W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
2,55
Diode BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,85
1,75
2,15
110
VF
Ir
Diode forward voltage
V
Reverse leakage current
0
600
ꢀA
trr
Reverse recovery time
ns
201
Qrr
Reverse recovered charge
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
ꢀC
1,02
Erec
RthJH
RthJC
ꢀWs
K/W
K/W
0,21
3,35
Thermal grease
thicknessꢁ50um
ꢂ = 0,61 W/mK
NTC Thermistor
Rated resistance
R25
DR/R
P
Tj=25°C
Tc=100°C
Tj=25°C
Tj=25°C
20,9
22
2,9
23,1
kOhm
%/K
mW
K
Deviation of R100
R100=1503ꢃ
Tol. 3%
Power dissipation given Epcos-Type
B-value
210
3980
B(25/100)
Copyright by Vincotech
Revision: 1
copyright Tyco Electronics
4
Revision: 1
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