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V23990-P545-C39-PM 参数 Datasheet PDF下载

V23990-P545-C39-PM图片预览
型号: V23990-P545-C39-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 16 页 / 840 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P545-A39/C39-PM
final datasheet
flow
PIM
0
Features
17mm 2-clip housing
Trench Fieldstop IGBT's for low saturation losses
600V / 20A
flow
0 housing
Target Applications
Industrial Drives
Embedded Generation
Schematic
Types
V23990-P545-A39-PM
V23990-P545-C39-PM (w/o brake)
Maximum Ratings
Parameter
Symbol
Condition
Value
Unit
Input Rectifier Bridge
Copyright by Vincotech
Revision: 1
Repetitive peak reverse voltage
Forward current per diode
Surge forward current
I t-value
Power dissipation per Diode
Maximum junction temperature
2
V
RRM
I
FAV
I
FSM
t
p
=10ms
It
P
tot
T
j
max
T
j
=T
j
max
2
1600
DC current
T
h
=80°C
T
c
=80°C
T
j
=25°C
T
j
=25°C
T
h
=80°C
T
c
=80°C
35
40
250
310
40
60,7
150
V
A
A
A2s
W
°C
Transistor Inverter
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
V
CE
I
C
I
cpuls
P
tot
V
GE
Tj”150°C
VCC=360V
VGE=15V
Maximum junction temperature
T
j
max
150
°C
T
j
=T
j
max
tp limited by
T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
23
28
60
47,4
71,8
±20
V
A
A
W
V
SC withstand time*
t
SC
6
Ps
* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits
Copyright by Vincotech
copyright Tyco Electronics
1
Revision: 1
Revision: 1