V23990-P543-*2*-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
Brake Transistor
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
1
5,8
6,5
2,1
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,00043
6
V
V
1,55
1,72
15
0,06
350
0
600
0
mA
nA
ꢀ
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
11
10
8
Rise time
10
ns
118
130
93
117
0,07
0,10
0,15
0,18
td(off)
tf
Turn-off delay time
Rgoff=16 ꢀ
Rgon=32 ꢀ
±15
300
6
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
368
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
28
Reverse transfer capacitance
Gate charge
11
42
nC
Thermal grease
thickness≤50µm
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
3,07
K/W
Brake Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
1,69
1,61
2,5
60
VF
Ir
Diode forward voltage
6
6
V
ꢁA
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Rgon=32 ꢀ
Rgon=32 ꢀ
600
300
7
8
97
151
0,23
0,23
522
321
0,05
0,09
IRRM
trr
A
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
±15
µC
A/µs
mWs
di(rec)max
/dt
Erec
Thermal grease
thickness≤50µm
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
4,29
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
Tj=25°C
Tc=100°C
Tc=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
22000
ꢀ
%
∆R/R R100=1486 ꢀ
-5
5
P
210
3,5
mW
mW/K
K
B(25/50)
Tol. ±3%
Tol. ±3%
B(25/100)
B-value
4000
K
Vincotech NTC Reference
A
copyright Vincotech
4
Revision: 4
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