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V23990-P543-C29-PM 参数 Datasheet PDF下载

V23990-P543-C29-PM图片预览
型号: V23990-P543-C29-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Industrial drives Embedded drives]
分类和应用:
文件页数/大小: 23 页 / 922 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P543-*2*-PM  
Characteristic Values  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
Vr [V] or  
VGE [V] or  
IC [A] or  
IF [A] or  
ID [A]  
VCE [V] or  
Tj  
Min  
Max  
VGS [V]  
VDS [V]  
Input Rectifier Diode  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=145°C  
0,8  
1,26  
1,24  
0,92  
0,82  
11  
1,45  
VF  
Vto  
rt  
Forward voltage  
30  
30  
30  
V
V
Threshold voltage (for power loss calc. only)  
Slope resistance (for power loss calc. only)  
Reverse current  
m  
mA  
14  
Ir  
1500  
1,1  
Thermal grease  
RthJH  
Thermal resistance chip to heatsink per chip  
thickness50µm  
λ = 1 W/mK  
2,10  
K/W  
Inverter Transistor  
Gate emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current incl. Diode  
Gate-emitter leakage current  
Integrated Gate resistor  
Turn-on delay time  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
5
1
5,8  
6,5  
2,2  
VGE(th) VCE=VGE  
0,00015  
10  
V
V
1,59  
1,78  
VCE(sat)  
ICES  
IGES  
Rgint  
td(on)  
tr  
15  
0
0,08  
350  
600  
0
mA  
nA  
20  
none  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
15  
14  
11  
Rise time  
14  
ns  
155  
170  
89  
td(off)  
tf  
Turn-off delay time  
Rgoff=16 ꢀ  
Rgon=32 ꢀ  
±15  
300  
10  
Fall time  
98  
0,16  
0,22  
0,24  
0,29  
Eon  
Turn-on energy loss per pulse  
Turn-off energy loss per pulse  
Input capacitance  
mWs  
pF  
Eoff  
Cies  
Coss  
Crss  
QGate  
551  
Output capacitance  
f=1MHz  
0
25  
Tj=25°C  
Tj=25°C  
40  
Reverse transfer capacitance  
Gate charge  
17  
±15  
480  
10  
62  
nC  
Thermal grease  
thickness50µm  
λ = 1 W/mK  
RthJH  
Thermal resistance chip to heatsink per chip  
2,41  
K/W  
Inverter Diode  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
1
1,61  
1,51  
10  
2,25  
VF  
IRRM  
trr  
Diode forward voltage  
10  
10  
V
A
Peak reverse recovery current  
Reverse recovery time  
11  
142  
219  
0,46  
0,80  
703  
397  
0,09  
0,17  
ns  
Qrr  
Reverse recovered charge  
Peak rate of fall of recovery current  
Reverse recovered energy  
Rgon=32 ꢀ  
±15  
300  
µC  
di(rec)max  
/dt  
A/µs  
mWs  
Erec  
Thermal grease  
thickness50µm  
λ = 1 W/mK  
RthJH  
Thermal resistance chip to heatsink per chip  
3,33  
K/W  
copyright Vincotech  
3
Revision: 4  
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