V23990-K428-A40-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
D8,D9,D10,D11,D12,D13
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,8
1,1
1,02
0,9
0,74
0,004
0,006
1,35
VF
Vto
rt
35
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
ꢀ
0,1
1,1
Ir
1500
mA
Thermal grease
RthJH
thickness≤50ꢁm
λ=1W/mK
K/W
Thermal resistance chip to heatsink per chip
0,90
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,4
VGE(th) VCE=VGE
0,0017
50
V
V
1,6
1,91
2,39
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
20
0,06
600
1200
0
mA
nA
ꢀ
4
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
106
111
18
Rise time
25
ns
228
298
84
125
2,66
4,46
2,78
4,58
td(off)
tf
Turn-off delay time
Rgoff=8ꢀ
Rgon=8ꢀ
±15
600
50
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
2770
205
160
380
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
nC
Thermal grease
thickness≤50ꢁm
λ=1W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
0,71
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,5
2,19
2,21
61,3
70,7
144
312
3,74
8,8
3494
950
1,38
3,48
2,9
VF
IRRM
trr
50
50
V
A
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=8ꢀ
±15
600
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50ꢁm
λ=1W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
0,95
Thermistor
Rated resistance
Deviation of R100
R100
R
T=25°C
T=100°C
T=100°C
T=25°C
T=25°C
T=25°C
1000
ꢀ
%
∆R/R R100=1670 ꢀ
-3
3
P
1670,313
ꢀ
Power dissipation constant
A-value
mW/K
1/K
1/K²
B(25/50) Tol. %
B(25/100) Tol. %
7,635*10-3
1,731*10-5
B-value
Vincotech NTC Reference
E
copyright Vincotech
3
Revision: 4.1
VINCOTECH [ VINCOTECH ]
