V23990-K428-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 17
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
D1,D2,D3,D4,D5,D6,D7 FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
5000
10000
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
4000
3000
2000
1000
0
8000
6000
4000
2000
0
0
I C (A)
R gon ( Ω )
0
20
40
60
80
100
8
16
24
32
40
At
At
Tj =
VCE
VGE
Tj =
°C
V
°C
V
A
V
25/150
600
±15
8
25/150
=
=
VR =
IF =
600
50
V
Rgon
=
VGE =
ꢀ
±15
Figure 19
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
D1,D2,D3,D4,D5,D6,D7 FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
100
10-1
10-1
D = 0,5
0,2
D = 0,5
0,2
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100
1011
10-5
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
At
At
tp / T
0,71
tp / T
0,95
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,11
Tau (s)
7,7E-01
1,3E-01
4,6E-02
8,2E-03
1,1E-03
R (C/W)
0,06
Tau (s)
2,5E+00
3,5E-01
7,8E-02
1,7E-02
3,6E-03
0,36
0,21
0,16
0,44
0,06
0,17
0,02
0,07
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8
Revision: 4.1
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