V23990-K427-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
10
10
Eon High T
8
8
Eon High T
Eon Low T
6
6
Eon Low T
Eoff High T
4
4
Eoff High T
Eoff Low T
2
2
Eoff Low T
0
0
I C (A)
R G ( Ω )
0
15
30
45
60
75
0
15
30
45
60
75
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
16
600
±15
35
V
Rgon
Rgoff
=
=
ꢁ
ꢁ
16
Figure 7
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 8
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
3
3
2,5
2,5
Erec
Tj = Tjmax -25°C
Tj = Tjmax -25°C
2
2
1,5
1
Erec
1,5
Tj = 25°C
Erec
1
0,5
0
Tj = 25°C
Erec
0,5
0
I C (A)
R G ( Ω )
0
15
30
45
60
75
0
15
30
45
60
75
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/150
600
°C
V
25/150
600
°C
V
V
A
=
=
=
=
±15
V
±15
Rgon
=
16
ꢁ
35
copyright Vincotech
5
Revision: 1.1