V23990-K427-A40-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
D8,D9,D10,D11,D12,D13
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,8
1,34
1,27
0,85
0,75
14
1,35
VF
Vto
rt
35
35
35
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mꢁ
mA
15
0,1
1,1
Ir
1500
Thermal grease
RthJH
thickness≤50ꢀm
λ=1W/mK
K/W
Thermal resistance chip to heatsink per chip
0,90
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,1
VGE(th) VCE=VGE
0,0008
35
V
V
1,6
1,87
2,30
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,005
120
600
0
mA
nA
ꢁ
20
-
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
78
79
24
Rise time
29
ns
196
268
77
131
2,54
3,84
1,92
3,18
td(off)
tf
Turn-off delay time
Rgoff=16 ꢁ
Rgon=16 ꢁ
±15
600
35
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
1950
155
115
203
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
960
40
nC
Thermal grease
thickness≤50ꢀm
λ=1W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
0,85
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
2,37
2,35
16
2,62
2,62
VF
IRRM
trr
35
35
V
A
Peak reverse recovery current
Reverse recovery time
23
336
550
2,20
5,36
63
67
0,77
2,07
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgoff=16 ꢁ
±15
600
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50ꢀm
λ=1W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
1,2
Thermistor
Rated resistance
Deviation of R100
R100
R
T=25°C
T=100°C
T=100°C
T=25°C
T=25°C
T=25°C
1000
ꢁ
%
∆R/R R100=1670 ꢁ
-3
3
P
1670,313
ꢁ
Power dissipation constant
A-value
mW/K
1/K
1/K²
B(25/50) Tol. %
B(25/100) Tol. %
7,635*10-3
1,731*10-5
B-value
Vincotech NTC Reference
E
copyright Vincotech
3
Revision: 1.1
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