V23990-K243-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 14
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
20
16
12
8
15
Qrr
12
Tj = Tjmax -25°C
Tj = Tjmax -25°C
Qrr
9
6
3
0
Qrr
Tj = 25°C
Qrr
4
Tj = 25°C
0
I C (A)
R g on ( Ω)
0
50
100
150
200
0
8
16
24
32
40
At
At
At
Tj =
Tj =
VCE
VGE
25/125
300
±15
8
°C
V
25/125
300
°C
V
A
V
=
=
VR =
IF =
VGE
V
100
Rgon
=
=
ꢀ
±15
Figure 15
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 16
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
200
200
Tj = Tjmax - 25°C
150
100
150
Tj = Tjmax -25°C
100
Tj = 25°C
Tj = 25°C
IRRM
IRRM
IRRM
IRRM
50
50
0
0
I
C (A)
R gon ( Ω )
0
8
16
24
32
40
0
50
100
150
200
At
At
Tj =
Tj =
VCE
VGE
25/125
300
±15
8
°C
V
25/125
300
°C
V
A
V
=
VR =
=
IF =
VGE
V
100
Rgon
=
=
ꢀ
±15
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7
Revision: 3.1
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