V23990-K243-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
10
10
Eon High T
Eon Low T
8
8
Eon High T
6
6
Eoff High T
Eoff Low T
4
4
Eoff Low T
Eoff High T
2
2
Eon Low T
0
0
I C (A)
R G ( Ω )
0
50
100
150
200
0
8
16
24
32
40
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/125
25/125
VCE
VGE
=
=
VCE
VGE
IC =
=
=
300
±15
8
300
±15
100
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
8
Figure 7
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 8
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
3,2
2,4
1,6
0,8
0
3,2
2,4
1,6
Erec
Tj = Tjmax -25°C
Erec
Tj = Tjmax -25°C
Erec
Tj = 25°C
Tj = 25°C
0,8
Erec
0
I C (A)
R G ( Ω )
0
50
100
150
200
0
8
16
24
32
40
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/125
300
±15
8
°C
V
25/125
300
°C
V
V
A
=
=
=
=
V
±15
Rgon
=
ꢀ
100
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5
Revision: 3.1