V23990-K229-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
D1,D2,D3,D4,D5,D6,D7 FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
1400
1400
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
1200
1000
800
1200
1000
800
600
400
200
0
di0/dtHigh T
di0/dtHigh T
600
dIrec/dtHigh T
400
dIrec/dtHigh T
200
0
0
20
40
60
80
I C (A)
R gon ( Ω )
0
10
20
30
40
50
At
At
Tj =
VCE
Tj =
VR =
IF =
125
600
±15
36
°C
V
125
600
25
°C
V
A
V
=
VGE
=
V
Rgon
=
VGE =
ꢀ
±15
Figure 19
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
D1,D2,D3,D4,D5,D6,D7 FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-5
10-4
10-3
10-2
10-1
100
1011
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
At
At
tp / T
0,90
tp / T
1,7
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
Thermal grease
Thermal grease
R (C/W)
0,04
Tau (s)
1,3E+01
R (C/W)
0,09
Tau (s)
2,0E+00
0,11
1,1E+00
1,6E-01
4,3E-02
5,7E-03
3,7E-04
0,60
2,1E-01
5,6E-02
8,0E-03
8,1E-04
0,38
0,61
0,25
0,26
0,08
0,15
0,04
copyright Vincotech
8
Revision: 3.1
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