V23990-K229-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Eon
Eoff
Eon
Eoff
I C (A)
R G ( Ω )
75
0
10
20
30
40
50
0
15
30
45
60
With an inductive load at
With an inductive load at
Tj =
125
Tj =
125
°C
V
°C
V
V
A
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
36
600
±15
25
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
36
Figure 7
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 8
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
3,5
3,5
Erec
3
3
2,5
2
2,5
2
Erec
1,5
1
1,5
1
0,5
0
0,5
0
I C (A)
R G ( Ω )
80
0
20
40
60
0
10
20
30
40
50
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
125
600
±15
36
°C
V
125
600
±15
25
°C
V
V
A
=
=
=
=
V
Rgon
=
ꢀ
copyright Vincotech
5
Revision: 3.1
VINCOTECH [ VINCOTECH ]
