V23990-K229-A40-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
D8,D9,D10,D11,D12,D13
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,8
1,08
1,03
0,9
0,78
18
1,35
VF
Vto
rt
25
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mǑ
mA
21
0,01
1,1
Ir
1500
Thermal grease
RthJH
thickness≤50۷m
λ=1W/mK
K/W
Thermal resistance chip to heatsink per chip
1,25
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,15
0,05
300
VGE(th) VCE=VGE
0,00085
25
V
V
1,35
1,88
2,2
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
1200
0
mA
nA
Ǒ
20
-
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
112
113
29,3
34,7
231
303
91
137
1,87
2,77
1,49
2,43
Rise time
ns
td(off)
tf
Turn-off delay time
Rgoff=32Ǒ
Rgon=32Ǒ
±15
600
25
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
1430
115
85
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
Vcc=960V
15
40
120
nC
Thermal grease
thickness≤50۷m
λ=1W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
1,2
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,5
2,47
2,49
13,5
18,3
319
544
1,48
3,69
174
64
2,75
VF
IRRM
trr
25
25
V
A
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=32Ǒ
±15
600
µC
di(rec)max
/dt
A/µs
mWs
0,52
1,44
Erec
Thermal grease
thickness≤50۷m
λ=1W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
1,52
Thermistor
Rated resistance
Deviation of R100
R100
R
T=25°C
T=100°C
T=100°C
T=25°C
T=25°C
T=25°C
1000
Ǒ
%
∆R/R R100=1670 Ǒ
-3
3
P
1670,313
Ǒ
Power dissipation constant
A-value
mW/K
1/K
1/K²
B(25/50) Tol. %
B(25/100) Tol. %
7,635*10-3
1,731*10-5
B-value
Vincotech NTC Reference
E
Copyright by Vincotech
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Revision: 4.1
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