V23990-K223-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
D1,D2,D3,D4,D5,D6,D7 FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
4000
8000
µ
µ
µ
µ
dI0/dt
dI0/dt
dIrec/dt
dIrec/dt
3200
2400
1600
800
0
6000
4000
2000
0
dIo/dtLow T
dIrec/dtLow T
di0/dtHigh T
dIrec/dtHigh T
I C (A)
R gon ( Ω )
0
20
40
60
80
100
0
8
16
24
32
40
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/125
300
±15
8
°C
V
25/125
300
°C
V
A
V
=
=
V
50
Rgon
=
VGE =
ꢀ
±15
Figure 19
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
D1,D2,D3,D4,D5,D6,D7 FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
10-4
10-3
10-2
10-1
100
1011
10-5
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
At
At
tp / T
0,95
tp / T
1,6
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
Thermal grease
Thermal grease
R (C/W)
0,02
Tau (s)
9,9E+00
R (C/W)
0,04
Tau (s)
9,2E+00
0,13
9,6E-01
1,5E-01
3,4E-02
5,2E-03
3,5E-04
0,22
1,0E+00
2,1E-01
4,0E-02
7,0E-03
7,5E-04
0,48
0,66
0,20
0,38
0,06
0,19
0,05
0,11
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8
Revision: 3.1
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