V23990-K223-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Eon High T
Eon Low T
Eon High T
Eon Low T
Eoff High T
Eoff Low T
Eoff High T
Eoff Low T
I C (A)
R G ( Ω )
0
20
40
60
80
100
0
8
16
24
32
40
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/125
25/125
VCE
VGE
=
=
VCE
VGE
IC =
=
=
300
±15
8
300
±15
50
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
8
Figure 7
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 8
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
1,5
1,5
Tj = Tjmax -25°C
Erec
1,2
1,2
Tj = Tjmax -25°C
0,9
0,6
0,3
0,0
0,9
Erec
Erec
0,6
Tj = 25°C
Tj = 25°C
Erec
0,3
0,0
I C (A)
R G ( Ω )
0
20
40
60
80
100
0
8
16
24
32
40
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/125
300
±15
8
°C
V
25/125
300
°C
V
V
A
=
=
=
=
V
±15
Rgon
=
ꢀ
50
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5
Revision: 3.1
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