V23990-K209-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
2
1,5
1
2
1,5
1
Eon High T
Eon High T
Eon Low T
Eoff High T
Eon Low T
Eoff High T
Eoff Low T
Eoff Low T
0,5
0,5
0
0
I C (A)
R G ( Ω )
0
3
6
9
12
15
18
0
50
100
150
200
250
300
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
64
600
±15
8
V
V
A
V
Rgon
Rgoff
=
=
Ǒ
Ǒ
64
Figure 7
IGBT
Figure 8
IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
0,9
0,9
0,75
0,6
Erec
0,75
Tj = Tjmax -25°C
Tj = Tjmax -25°C
0,6
Erec
0,45
0,3
0,15
0
0,45
0,3
Tj = 25°C
Erec
Tj = 25°C
Erec
0,15
0
I C (A)
R G ( Ω )
300
0
3
6
9
12
15
0
50
100
150
200
250
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/150
600
°C
V
25/150
600
±15
8
°C
V
V
A
=
=
=
=
±15
V
Rgon
=
64
Ǒ
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5
Revision: 4.2
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