V23990-K209-A40-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
D8,D9,D10,D11,D12,D13
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,51
1,42
0,86
0,79
0,03
0,03
VF
Vto
rt
25
25
25
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Ǒ
0,05
Ir
1500
mA
Thermal grease
RthJH
thickness≤50۷m
λ=1 W/mK
K/W
Thermal resistance chip to heatsink per chip
1,5
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,5
VGE(th) VCE=VGE
0,0003
8
V
V
1,6
2,01
2,38
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,06
180
1200
0
mA
nA
Ǒ
20
-
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
115
126
33
Rise time
39
ns
225
290
89
130
0,56
0,88
0,48
0,77
td(off)
tf
Turn-off delay time
Rgoff=64Ǒ
Rgon=64Ǒ
±15
600
8
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
490
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
50
Reverse transfer capacitance
Gate charge
30
Vcc=960V
15
8
53
nC
Thermal grease
thickness≤50۷m
λ=1 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
1,84
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,5
2,37
2,28
4,49
6,2
362
574
0,61
1,47
31
2,9
VF
IRRM
trr
8
8
V
A
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgoff=64Ǒ
±15
600
µC
di(rec)max
/dt
A/µs
mWs
22
0,24
0,62
Erec
Thermal grease
thickness≤50۷m
λ=1 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
2,53
PTC
Rated resistance
Deviation of R100
R100
R
T=25°C
T=100°C
T=25°C
T=25°C
T=25°C
1000
Ǒ
%
∆R/R R100=1670 Ǒ
R
-3
3
1670,313
7,635*10-3
1,731*10-5
Ǒ
A-value
B(25/50) Tol. %
B(25/100) Tol. %
1/K
1/K²
B-value
Vincotech NTC Reference
E
Copyright by Vincotech
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Revision: 4.2
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