V23990-K202-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
2
1,2
Qrr
Tj = Tjmax -25°C
Qrr
1,5
0,9
0,6
0,3
Tj = 25°C
Tj = Tjmax -25°C
Qrr
Qrr
1
0,5
0
Tj = 25°C
0
0
I C (A)
R g on ( Ω)
150
0
5
10
15
20
25
50
75
100
125
At
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
25/125
300
15
25/125
300
10
=
V
A
V
=
V
Rgon
=
VGE =
32
ꢀ
15
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
12
12
Tj = Tjmax -25°C
Tj = Tjmax - 25°C
IRRM
IRRM
9
6
3
0
Tj = 25°C
8
Tj = 25°C
IRRM
IRRM
4
0
0
I C (A)
R gon ( Ω )
150
30
60
90
120
0
5
10
15
20
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
V
A
V
25/125
300
15
25/125
300
10
=
=
V
Rgon
=
VGE =
32
ꢀ
15
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7
Revision: 3
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