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V23990-K202-A-1B-PM 参数 Datasheet PDF下载

V23990-K202-A-1B-PM图片预览
型号: V23990-K202-A-1B-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Trench Fieldstop IGBT3 technology]
分类和应用: 双极性晶体管
文件页数/大小: 17 页 / 2044 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-K202-A-PM  
datasheet  
Characteristic Values  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
Vr [V] or  
VGE [V] or  
IC [A] or  
IF [A] or  
ID [A]  
VCE [V] or  
Tj  
Min  
Max  
VGS [V]  
VDS [V]  
D8,D9,D10,D11,D12,D13  
Forward voltage  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
1,51  
1,42  
0,86  
0,79  
0,03  
0,03  
VF  
Vto  
rt  
25  
25  
25  
V
V
Threshold voltage (for power loss calc. only)  
Slope resistance (for power loss calc. only)  
Reverse current  
0,05  
Ir  
1500  
mA  
Thermal grease  
RthJH  
thickness50um  
λ =1 W/mK  
K/W  
Thermal resistance chip to heatsink  
1,5  
T1,T2,T3,T4,T5,T6,T7  
Gate emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current incl. Diode  
Gate-emitter leakage current  
Integrated Gate resistor  
Turn-on delay time  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
5
5,8  
6,5  
1,9  
VGE(th) VCE=VGE  
0,0008  
10  
V
V
1,1  
1,68  
1,91  
VCE(sat)  
ICES  
IGES  
Rgint  
td(on)  
tr  
15  
0
0,03  
300  
600  
0
mA  
nA  
20  
-
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
17  
17  
13  
Rise time  
16  
ns  
145  
163  
91  
td(off)  
tf  
Turn-off delay time  
Rgoff=16 ꢀ  
Rgon=32 ꢀ  
±15  
300  
10  
Fall time  
99  
0,229  
0,309  
0,224  
0,283  
Eon  
Turn-on energy loss per pulse  
Turn-off energy loss per pulse  
Input capacitance  
mWs  
pF  
Eoff  
Cies  
Coss  
Crss  
QGate  
551  
Output capacitance  
f=1MHz  
0
25  
Tj=25°C  
Tj=25°C  
40  
Reverse transfer capacitance  
Gate charge  
17  
±15  
300  
10  
62  
nC  
Thermal grease  
thickness50um  
λ =1 W/mK  
RthJH  
K/W  
Thermal resistance chip to heatsink  
2,0  
D1,D2,D3,D4,D5,D6,D7  
Diode forward voltage  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
1,44  
1,42  
8,5  
10,3  
189  
275  
0,64  
1,12  
90  
1,6  
VF  
IRRM  
trr  
10  
10  
V
A
Peak reverse recovery current  
Reverse recovery time  
ns  
Qrr  
Reverse recovered charge  
Peak rate of fall of recovery current  
Reverse recovered energy  
diF/dt=tbd A/us  
0
300  
µC  
di(rec)max  
/dt  
A/µs  
mWs  
55  
0,12  
0,22  
Erec  
Thermal grease  
thickness50um  
λ =1 W/mK  
RthJH  
K/W  
Thermal resistance chip to heatsink  
2,5  
PTC  
Rated resistance  
Deviation of R100  
R100  
R
T=25°C  
T=100°C  
T=100°C  
T=25°C  
T=25°C  
1000  
%
R/R R100=1670 ꢀ  
P
-3  
3
1670,313  
7,635*10-3  
1,731*10-5  
A-value  
B(25/50) Tol. %  
B(25/100) Tol. %  
1/K  
1/K²  
B-value  
Vincotech NTC Reference  
E
copyright Vincotech  
3
Revision: 3