V23990-K200-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
500
1750
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
1500
1250
1000
750
500
250
0
dIrec/dt
400
300
200
100
0
I C (A)
R gon ( Ω )
150
0
5
10
15
20
25
30
0
25
50
75
100
125
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
V
۷
°C
V
A
V
25/150
600
25/150
600
=
=
±15
15
Rgon
=
VGE =
32
±15
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,05
0,02
0,01
0,005
0.000
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100
101
10-5
10-4
10-3
10-2
10-1
100
101
1
t p (s)
t p (s)
At
At
tp / T
1,3
tp / T
1,92
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,08
Tau (s)
1,5E+00
1,6E-01
3,7E-02
7,8E-03
7,6E-04
R (C/W)
0,04
Tau (s)
9,1E+00
6,2E-01
1,1E-01
2,2E-02
2,6E-03
4,7E-04
0,57
0,21
0,36
0,85
0,22
0,46
0,12
0,25
0,11
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Revision: 4.1
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