V23990-K200-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
3
3
Qrr
2,5
2,5
2
Qrr
Tj = Tjmax -25°C
Tj = Tjmax -25°C
2
1,5
1
1,5
1
Tj = 25°C
Qrr
Tj = 25°C
Qrr
0,5
0
0,5
0
0
I
C (A)
R g on ( Ω)
150
0
5
10
15
20
25
30
25
50
75
100
125
At
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
°C
25/150
600
25/150
600
=
V
V
۷
V
A
V
=
±15
15
Rgon
=
VGE =
32
±15
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
15
12
Tj = Tjmax -25°C
10
8
12
9
IRRM
Tj = Tjmax - 25°C
Tj = 25°C
IRRM
6
IRRM
6
Tj = 25°C
4
2
0
IRRM
3
0
0
I C (A)
R gon ( Ω )
150
25
50
75
100
125
0
5
10
15
20
25
30
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
°C
25/150
600
25/150
600
=
=
V
V
۷
V
A
V
±15
15
Rgon
=
VGE =
32
±15
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7
Revision: 4.1
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