30-F212R6A050SC-M447-E-PM
30-F212R6A050SC01-M447E10-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
Figure 17
D1,D2,D3,D4,D5,D6 FWD
Figure 18
D1,D2,D3,D4,D5,D6 FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
4000
10000
µ
µ
µ
µ
dI0/dt
dIrec/dtLow T
dI0/dt
dIo/dtLow T
dIrec/dt
dIrec/dt
3000
2000
1000
0
7500
5000
2500
0
di0/dtHigh T
dIrec/dtLow T
di0/dtHigh T
dIrec/dtHigh T
dIo/dtLow T
dIrec/dtHigh T
0
25
50
75
100
0
8
16
24
32
40
I C (A)
R gon ( Ω )
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
V
25/150
25/150
600
=
=
600
±15
8
V
50
A
Rgon
=
VGE =
Ω
±15
V
Figure 19
T1,T2,T3,T4,T5,T6 IGBT
Figure 20
D1,D2,D3,D4,D5,D6 FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
100
10-1
10-1
D = 0,5
0,2
D = 0,5
0,2
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
10
1
10
1
10
10-5
10-4
10-3
10-2
10-1
100
10
2
2
At
At
tp / T
0,58
tp / T
0,95
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
Phase-Change Material
FWD thermal model values
Phase-Change Material
R (C/W)
0,07
Tau (s)
2,10
R (C/W)
0,02
Tau (s)
9,45
1,26
0,15
0,03
0,01
0,00
0,13
0,24
0,08
0,27
0,05
0,18
0,08
0,01
0,42
0,04
0,00
0,16
0,10
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