30-F212R6A050SC-M447-E-PM
30-F212R6A050SC01-M447E10-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
Figure 25
T1,T2,T3,T4,T5,T6 IGBT
Figure 26
T1,T2,T3,T4,T5,T6 IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(QGE
17,5
)
103
15
12,5
10
10uS
102
240V
960V
100uS
101
1mS
7,5
5
100
10mS
100mS
DC
2,5
0
0
10-1
100
25
50
75
100
125
150
175
200
225
101
103
102
VCE (V)
Q g (nC)
At
At
IC
=
D =
Th =
50
A
single pulse
80
ºC
V
VGE
Tj =
=
±15
Tjmax
ºC
Figure 27
T1,T2,T3,T4,T5,T6 IGBT
Figure 28
T1,T2,T3,T4,T5,T6 IGBT
Short circuit withstand time as a function of
gate-emitter voltage
Typical short circuit collector current as a function of
gate-emitter voltage
tsc = f(VGE
)
VGE = f(QGE
)
17,5
800
15
12,5
10
600
400
200
7,5
5
2,5
0
0
12
13
14
15
16
17
18
19
20
VGE (V)
12
13
14
15
16
17
18
19
20
GE (V)
V
At
At
VCE
=
VCE
Tj =
≤
1200
175
V
1200
175
V
Tj ≤
ºC
ºC
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10
Revision: 1
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