20-1B06IPB004RC-P952A40
20-PB06IPB004RC-P952A40Y
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] or I C [A] or
V GE [V] or
V GS [V]
V CE [V] or I F [A] or
T j
Min
Max
V DS [V]
I D [A]
Inverter Transistor
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage*
Collectorꢀemitter cutꢀoff current incl. Diode
Gateꢀemitter leakage current
Integrated Gate resistor
Turnꢀon delay time **
Rise time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
4,4
0,8
5
5,6
2,8
0,1
120
VGE(th)
V CEsat
I CES
I GES
R gint
td(on)
tr
VCE=VGE
0,000075
4
V
V
2,20
2,29
15
0
600
0
mA
nA
ꢁ
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
586
635
21
30
ns
666
749
20
td(off)
tf
Turnꢀoff delay time **
Fall time
U CC=15V
V IN=5V
400
4
50
0,117
0,198
0,072
0,115
Eon
Turnꢀon energy loss per pulse
Turnꢀoff energy loss per pulse
Input capacitance
mWs
pF
Eoff
C ies
305
18
9
C oss
C rss
Output capacitance
f=1MHz
0
25
Tj=25°C
Reverse transfer capacitance
PhaseꢀChange
Material λ =
3,4W/mK
R th(j-s)
Thermal resistance chip to heatsink
8,32
K/W
* chip data
** including gate driver
Inverter Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
0,7
2,93
2,83
2
2,5
V F
I RRM
Diode forward voltage *
Peak reverse recovery current
Reverse recovery time
10
4
V
A
3
166
254
0,18
0,35
25
16
0,045
0,085
t rr
ns
U CC=15V
V IN=5V
Q rr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
400
nC
( di rf/dt )max
E rec
A/µs
mWs
PhaseꢀChange
Material λ =
3,4W/mK
R th(j-s)
Thermal resistance chip to heatsink
9,86
K/W
* chip data
DC - Shunt
R
R2 value
Tj=25°C
50
mꢁ
nF
DC link Capacitor
C value
C
100
copyright Vincotech
5
08 Jun. 2015 / Revision 1
VINCOTECH [ VINCOTECH ]
