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20-1B06IPB004RC-P952A40-3 参数 Datasheet PDF下载

20-1B06IPB004RC-P952A40-3图片预览
型号: 20-1B06IPB004RC-P952A40-3
PDF下载: 下载PDF文件 查看货源
内容描述: [Sense output of DC-current]
分类和应用:
文件页数/大小: 30 页 / 2640 K
品牌: VINCOTECH [ VINCOTECH ]
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20-1B06IPB004RC-P952A40  
20-PB06IPB004RC-P952A40Y  
datasheet  
Characteristic Values  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
V r [V] or I C [A] or  
V GE [V] or  
V GS [V]  
V CE [V] or I F [A] or  
T j  
Min  
Max  
V DS [V]  
I D [A]  
Input Rectifier Diode  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
1,04  
0,97  
0,87  
0,74  
25  
V F  
V to  
r t  
Forward voltage *  
7
7
7
V
V
Threshold voltage (for power loss calc. only)  
Slope resistance (for power loss calc. only)  
Reverse current  
mꢁ  
mA  
33  
0,01  
I r  
1200  
PhaseꢀChange  
Material λ =  
3,4W/mK  
R th(j-s)  
Thermal resistance chip to heatsink  
3,54  
K/W  
* chip data  
PFC IGBT  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
3,3  
4
4,7  
V GE(th)  
V CEsat  
I CES  
tr  
VGE=VCE  
Gate emitter threshold voltage  
Collectorꢀemitter saturation voltage*  
Collectorꢀemitter cutꢀoff  
Rise time  
0,0004  
15  
V
V
2,18  
2,74  
2,22  
0,04  
15  
0
650  
400  
mA  
2
2
107  
161  
4
td(off)  
tf  
Turnꢀoff delay time **  
Fall time  
ns  
mWs  
pF  
U CC=15V  
4
2
0,055  
0,091  
0,020  
0,038  
Eon  
Eoff  
C ies  
C oss  
C rss  
Q G  
Turnꢀon energy loss per pulse  
Turnꢀoff energy loss per pulse  
Input capacitance  
930  
24  
4
Output capacitance  
f=1MHz  
0
25  
Tj=25°C  
Tj=25°C  
Reverse transfer capacitance  
Gate charge  
±15  
520  
15  
38  
nC  
PhaseꢀChange  
Material λ =  
3,4W/mK  
R th(j-s)  
K/W  
Thermal resistance chip to heatsink  
4,77  
* chip data  
PFC Inverse Diode  
Tj=25°C  
Tj=125°C  
1,17  
0,91  
V F  
Diode forward voltage  
6
V
PhaseꢀChange  
Material λ =  
3,4W/mK  
R th(j-s)  
K/W  
Thermal resistance chip to heatsink  
8,45  
PFC Diode  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
2,05  
2,10  
11  
13  
18  
2,22  
V F  
IRRM  
trr  
Forward voltage *  
15  
4
V
A
Peak recovery current  
Reverse recovery time  
Reverse recovery charge  
Reverse recovered energy  
Peak rate of fall of recovery current  
ns  
28  
0,12  
0,24  
0,013  
0,033  
959  
452  
Qrr  
Erec  
U CC=15V  
400  
µC  
mWs  
A/µs  
di(rec)max  
/dt  
PhaseꢀChange  
Material λ =  
3,4W/mK  
R th(j-s)  
Thermal resistance chip to heatsink  
6,16  
K/W  
* chip data  
PFC Shunt  
R
R1 value  
100  
mꢁ  
copyright Vincotech  
4
08 Jun. 2015 / Revision 1