10-PZ124PA032ME03-L629F98Y
datasheet
H-Bridge Switching Characteristics
figure 15.
MOSFET
figure 16.
MOSFET
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
1,2
1,0
0,8
0,6
0,4
0,2
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-4/15
4
V
At
600
-4/15
32
V
25 °C
25 °C
V
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Ω
figure 17.
MOSFET
figure 18.
MOSFET
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
100
80
60
40
20
0
100
80
60
40
20
0
IRM
IRM
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-4/15
4
V
V
At
600
-4/15
32
V
25 °C
25 °C
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Ω
Copyright Vincotech
11
04 Sep. 2020 / Revision 1
VINCOTECH [ VINCOTECH ]
