10-FY12NMA160SH-M420F
10-PY12NMA160SH-M420FY
preliminary datasheet
Half bridge
half bridge IGBT and Neutral Point FWD
Figure 9
IGBT
Figure 10
IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1,00
0,10
0,01
0,00
1,00
tdoff
tdon
tdoff
tdon
tf
0,10
tf
tr
tr
0,01
0,00
I C (A)
R G ( Ω)
0
40
80
120
160
200
0
4
8
12
16
20
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
125
350
±15
4
°C
V
125
350
±15
100
°C
V
V
A
=
=
=
=
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
4
Figure 11
NP FWD
Figure 12
NP FWD
Typical reverse recovery time as a
function of collector current
trr = f(Ic)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
0,120
0,090
0,060
0,030
0,000
0,180
trr High T
0,150
0,120
0,090
0,060
0,030
trr High T
trr Low T
trr Low T
0,000
0
I C (A)
R gon ( Ω)
0
40
80
120
160
200
4
8
12
16
20
At
At
Tj =
VCE
VGE
Tj =
25/125
°C
V
25/125
350
°C
V
A
V
=
=
VR =
350
±15
4
IF =
V
100
Rgon
=
VGE =
ꢀ
±15
copyright Vincotech
8
Revision: 2
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