10-FY12NMA160SH-M420F
10-PY12NMA160SH-M420FY
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
VGE [V] or
VGS [V]
Tj
Min
Max
NP IGBT
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
1,85
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,0016
100
V
V
1,05
1,58
1,8
15
0
0,0052
1200
600
0
mA
nA
ꢀ
20
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
103
103
16,8
19,2
158
179
44
Rise time
ns
td(off)
tf
Turn-off delay time
Rgoff=4 ꢀ
±15
350
100
Rgon=4 ꢀ
Fall time
64
1,06
1,52
2,48
3,32
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
µWs
pF
Eoff
Cies
Coss
Crss
QGate
RthJH
RthJC
6280
Output capacitance
f=1MHz
15
480
100
Tj=25°C
Tj=25°C
400
Reverse transfer capacitance
Gate charge
186
620
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
1,01
0,67
K/W
NP Inverse Diode
Tj=25°C
Tj=125°C
1,00
1,61
1,57
2,15
VF
Diode forward voltage
15
V
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
RthJC
Thermal resistance chip to heatsink per chip
Coupled thermal resistance inverter transistor-diode
3,43
2,27
K/W
Halfbridge Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,50
2,47
2,11
3,40
200
VF
Ir
Diode forward voltage
60
V
ꢁA
Reverse leakage current
1200
350
107
142
51
IRRM
trr
Peak reverse recovery current
Reverse recovery time
A
ns
69
6,24
12,71
5985
2890
1,71
3,61
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Rgon=4 ꢀ
±15
100
µC
di(rec)max
/dt
A/µs
mWs
Erec
RthJH
RthJC
Thermal grease
thickness≤50um
λ = 1 W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
1,15
K/W
0,76
DC link Capacitor
C value
C
DC+ to Neutral and DC- to Neutral
100
nF
Thermistor
Rated resistance
Deviation of R25
Power dissipation
Power dissipation constant
B-value
R
ꢂR/R
P
T=25°C
T=25°C
T=25°C
Tj=25°C
Tj=25°C
Tj=25°C
22000
ꢀ
%
R100=1486 ꢀ
-5
+5
200
2
mW
mW/K
K
B(25/50)
Tol. ±3%
Tol. ±3%
3950
3996
B(25/100)
B-value
K
Vincotech NTC Reference
B
Module Properties
per module
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
LsCE
Thermal resistance, case to heatsink
Module stray inductance
Chip module lead resistance, terminals -chip
Mounting torque
tbd.
5
K/W
nH
mꢀ
Nm
g
V23990-P-M107-*-31
Tc=25°C, per switch
Rcc'1+EE'
M
tbd.
Screw M4 - mounting according to valid application note
Flow1-4TY-P-*-HI for PressFiT, V23990-P-M101-*-31 for SolderPin
2
2,2
Weight
G
42,28
copyright Vincotech
5
Revision: 2
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