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10-F0062PA200SA01-P996F19 参数 Datasheet PDF下载

10-F0062PA200SA01-P996F19图片预览
型号: 10-F0062PA200SA01-P996F19
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 15 页 / 382 K
品牌: VINCOTECH [ VINCOTECH ]
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FZ06 / F0062PA200SA01
preliminary datasheet
Output Inverter
Figure 13
Typical reverse recovery charge as a
function of collector current
Q
rr
= f(I
C
)
30
Q
rr
(
μ
C)
Output inverter FRED
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q
rr
= f(R
gon
)
30
Output inverter FRED
Q
rr
25
Q
rr
(
μ
C)
25
T
j
= T
jmax
-25°C
20
20
Q
rr
T
j
= T
jmax
-25°C
15
15
Q
rr
T
j
= 25°C
10
10
Q
rr
T
j
= 25°C
5
5
0
0
0
100
200
300
I
C
(A)
400
0
4
8
12
16
R
g on
(
Ω)
20
At
At
T
j
=
V
CE
=
V
GE
=
R
gon
=
25/150
300
±15
2
°C
V
V
At
T
j
=
V
R
=
I
F
=
V
GE
=
25/150
300
200
±15
°C
V
A
V
Figure 15
Typical reverse recovery current as a
function of collector current
I
RRM
= f(I
C
)
300
I
rrM
(A)
Output inverter FRED
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I
RRM
= f(R
gon
)
300
I
rrM
(A)
Output inverter FRED
I
RRM
240
240
T
j
= T
jmax
-25°C
180
I
RRM
180
T
j
= T
jmax
- 25°C
T
j
= 25°C
120
120
I
RRM
T
j
= 25°C
I
RRM
60
60
0
0
100
200
300
I
C
(A)
400
0
0
4
8
12
16
R
gon
(
Ω
)
20
At
T
j
=
V
CE
=
V
GE
=
R
gon
=
25/150
300
±15
2
°C
V
V
At
T
j
=
V
R
=
I
F
=
V
GE
=
25/150
300
200
±15
°C
V
A
V
copyright Vincotech
7
Revision: 1