FZ06 / F0062PA200SA01
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
V
CE [V] or
DS [V]
Tj
Min
Max
V
GS [V]
V
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
1
5,8
6,5
2,3
VGE(th) VCE=VGE
0,0032
200
V
V
1,68
1,99
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
1,25
1000
600
0
mA
nA
Ω
0
20
2
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
209
222
32
Rise time
38
ns
267
301
82
td(off)
tf
Turn-off delay time
Rgoff=4 Ω
Rgon=4 Ω
±15
300
200
Fall time
98
1,57
2,56
5,8
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
7,66
Cies
Coss
Crss
QGate
12335
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
769
Reverse transfer capacitance
Gate charge
366
±15
480
200
1240
nC
Thermal foil
thickness=76um
Kunze foil KU-
ALF5
RthJH
Thermal resistance chip to heatsink per chip
0,33
K/W
Inverter Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
1,73
1,7
160,7
209,6
117
142,4
9,51
17,79
5385
4096
2,32
4,34
2,3
VF
IRRM
trr
Diode forward voltage
200
200
V
A
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgoff=4 Ω
0
300
μC
di(rec)max
/dt
A/μs
mWs
Erec
Thermal foil
thickness=76um
Kunze foil KU-
ALF5
RthJH
Thermal resistance chip to heatsink per chip
0,47
K/W
copyright Vincotech
3
Revision: 1
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