10-FY07ZAB050SM-L514B08
target datasheet
H-Bridge Switch Lo/Hi Side
Parameter
Value
Unit
Symbol
Conditions
VGE [V] VCE [V] IC [A] Tj[ °C]
Min
Typ
Max
Static
25
0,0005
3,3
1
4
4,7
Gateꢀemitter threshold voltage
=
V
V
VGE VCE
V
GE(th)
125
25
1,82
2,00
2,22
Collectorꢀemitter saturation voltage
15
50
125
150
25
V
CEsat
40
Collectorꢀemitter cutꢀoff current
Gateꢀemitter leakage current
Internal gate resistance
Input capacitance
0
650
0
µA
nA
ꢁ
I
CES
125
25
120
20
I
GES
125
none
3000
50
rg
C
C
C
ies
oes
res
Output capacitance
f=1 MHz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
11
15
520
50
120
nC
Q
g
Thermal
phaseꢀchange
material
Thermal resistance junction to sink
1,13
K/W
R
th(j-s)
ʎ
=3,4W/mK
H-Bridge Diode Lo/Hi Side
Parameter
Symbol
Conditions
Vr [V]
Value
Typ
Unit
dIF/dt [A/us]
IF [A]
Tj
Min
Max
1,82
0,6
Static
25°C
1,55
1,50
1,45
Forward voltage
VF
50
V
125°C
150°C
25°C
Reverse leakage current
Irm
650
µA
150°C
Thermal
Phase-Change
Material λ=3,4W/mK
Thermal resistance chip to heatsink
RthJH
1,48
K/W
Copyright Vincotech
7
14 Aug. 2015 / Revision 1
VINCOTECH [ VINCOTECH ]
