10-FY07ZAB050SM-L514B08
target datasheet
Characteristic Values
Rectifier Diode
Symbol
Parameter
Conditions
Value
Typ
Unit
V
T
r [V] IF [A] j [°C] Min
Max
Static
25
1,07
1,13
1,21
Forward voltage
Reverse leakage current
25
125
150
25
V
VF
50
1600
µA
Ir
145
1100
Thermal
phaseꢀchange
material
Thermal resistance junction to sink
0,82
K/W
R th(j-s)
ʎ
=3,4W/mK
PFC Switch
Parameter
Value
Unit
Symbol
Conditions
VGE [V] VCE [V] IC [A] Tj[ °C]
Min
Typ
Max
Static
25
0,00075
125
3,3
4
4,7
Gateꢀemitter threshold voltage
=
V
V
VGE VCE
V
GE(th)
25
1,67
1,84
1,89
2,22
Collectorꢀemitter saturation voltage
15
75
125
150
25
V
CEsat
40
Collectorꢀemitter cutꢀoff current
Gateꢀemitter leakage current
Internal gate resistance
Input capacitance
0
650
0
µA
nA
ꢁ
I
CES
125
25
120
20
I
GES
125
none
4300
75
rg
C
C
C
ies
oes
res
Output capacitance
f=1 MHz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
16
15
520
75
166
nC
Q
g
Thermal
phaseꢀchange
material
Thermal resistance junction to sink
1,14
K/W
R
th(j-s)
ʎ
=3,4W/mK
Copyright Vincotech
5
14 Aug. 2015 / Revision 1
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