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10-F0062PA150SA01-P995F19 参数 Datasheet PDF下载

10-F0062PA150SA01-P995F19图片预览
型号: 10-F0062PA150SA01-P995F19
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 15 页 / 381 K
品牌: VINCOTECH [ VINCOTECH ]
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FZ06 / F0062PA150SA01
preliminary datasheet
Output Inverter
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI
0
/dt,dI
rec
/dt = f(I
C
)
7000
di
rec
/ dt (A/
μ
s)
Output inverter FRED
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI
0
/dt,dI
rec
/dt = f(R
gon
)
10000
di
rec
/ dt (A/
μ
s)
Output inverter FRED
dI
0
/dt
dI
rec
/dt
dI
o
/dt
Low T
dI
0
/dt
dI
rec
/dt
8000
6000
T
j
= 25°C
T
j
= T
jmax
- 25°C
6000
5000
di
0
/dt
High T
4000
3000
4000
2000
dI
rec
/dt
Low T
dI
rec
/dt
High T
1000
2000
dI
rec
/dt
High T
0
0
50
100
150
200
250
I
C
(A)
300
0
0
4
8
12
16
R
gon
(
Ω
)
20
At
T
j
=
V
CE
=
V
GE
=
R
gon
=
25/150
300
±15
4
°C
V
V
At
T
j
=
V
R
=
I
F
=
V
GE
=
25/150
300
150
±15
°C
V
A
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
Z
thJH
= f(t
p
)
10
0
Output inverter IGBT
Figure 20
FRED transient thermal impedance
as a function of pulse width
Z
thJH
= f(t
p
)
10
0
Output inverter FRED
Z
thJH
(K/W)
10
-1
10
-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-2
Z
th-JH
(K/W)
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10
1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
p
(s)
t
p
(s)
10
1
1
At
D=
R
thJH
=
t
p
/ T
0,36
K/W
At
D=
R
thJH
=
t
p
/ T
0,55
K/W
IGBT thermal model values
R (C/W)
0,01
0,08
0,11
0,12
0,02
0,02
Tau (s)
9,7E+00
1,3E+00
1,7E-01
4,9E-02
3,6E-03
3,8E-04
FRED thermal model values
R (C/W)
0,02
0,07
0,11
0,23
0,06
0,06
Tau (s)
9,9E+00
1,3E+00
1,9E-01
5,0E-02
5,8E-03
6,7E-04
copyright Vincotech
8
Revision: 1