欢迎访问ic37.com |
会员登录 免费注册
发布采购

10-F0062PA150SA01-P995F19 参数 Datasheet PDF下载

10-F0062PA150SA01-P995F19图片预览
型号: 10-F0062PA150SA01-P995F19
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 15 页 / 381 K
品牌: VINCOTECH [ VINCOTECH ]
 浏览型号10-F0062PA150SA01-P995F19的Datasheet PDF文件第6页浏览型号10-F0062PA150SA01-P995F19的Datasheet PDF文件第7页浏览型号10-F0062PA150SA01-P995F19的Datasheet PDF文件第8页浏览型号10-F0062PA150SA01-P995F19的Datasheet PDF文件第9页浏览型号10-F0062PA150SA01-P995F19的Datasheet PDF文件第11页浏览型号10-F0062PA150SA01-P995F19的Datasheet PDF文件第12页浏览型号10-F0062PA150SA01-P995F19的Datasheet PDF文件第13页浏览型号10-F0062PA150SA01-P995F19的Datasheet PDF文件第14页  
FZ06 / F0062PA150SA01  
preliminary datasheet  
Output Inverter  
Figure 25  
Output inverter IGBT  
Figure 26  
Gate voltage vs Gate charge  
Output inverter IGBT  
Safe operating area as a function  
of collector-emitter voltage  
IC = f(VCE  
)
VGE = f(QGE  
)
22  
20  
18  
16  
14  
12  
10  
8
10uS  
100uS  
103  
120V  
DC  
480V  
1mS  
100mS  
10mS  
102  
101  
6
4
100  
2
0
0
10-1  
100  
200  
400  
600  
800  
1000  
1200  
103  
101  
102  
VCE (V)  
Q g (nC)  
At  
At  
IC  
=
D =  
Th =  
150  
A
single pulse  
80  
ºC  
VGE  
Tj =  
=
±15  
V
Tjmax  
ºC  
copyright Vincotech  
10  
Revision: 1