FZ06 / F0062PA150SA01
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
V
CE [V] or
DS [V]
Tj
Min
Max
V
GS [V]
V
Inverter Transistor
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
1
5,8
6,5
2,2
VGE(th) VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,0024
150
V
V
1,61
1,87
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,96
700
600
0
mA
nA
Ω
20
2
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
231
241
32
Rise time
37
ns
296
329
81
95
2,03
3
td(off)
tf
Turn-off delay time
Rgoff=4 Ω
Rgon=4 Ω
±15
300
150
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
3,88
5,21
Eoff
Cies
Coss
Crss
QGate
RthJH
RthJC
9240
576
274
930
0,36
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
nC
Thermal foil
thickness=76um
Kunze foil KU-
ALF5
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
K/W
Inverter Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
1,71
1,6
2,2
VF
IRRM
trr
Diode forward voltage
50
V
A
123,92
161,1
108,8
273,1
7,37
15,35
2262
2417
1,62
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Rgon=4 Ω
±15
300
150
μC
di(rec)max
/dt
A/μs
mWs
Erec
RthJH
RthJC
3,48
Thermal foil
thickness=76um
Kunze foil KU-
ALF5
0,55
K/W
copyright Vincotech
3
Revision: 1
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