Absolute Maximum Ratings
Drain-to-Source Voltage (VDS)
Source Current (IS ) Continuous
Source Current (IS ) Pulsed (10μs)
(3)
8V @ 25°C
24A
100A
54°C/W
-0.3V to 17.3V / 40mA
-0.3V to 8.0V / 10mA
Thermal Resistance R
VC
θJA
SP, SN, OV, SL
-0.3V to 17.3V / 10mA
UV,BK, FT
GND
-0.3V / 5A peak
-65oC to 150oC
-40oC to Over Temperature Fault (TFT)
250oC
Storage Temperature
Operating Junction Temperature
Lead Temperature (Soldering, 20 sec)
ESD Rating
2kV HBM
Electrical Specifications
Unless otherwise specified: -40°C < TJ < 125°C, VC =12V, CVc = 1uF, CSL = 10pF
Parameter
Symbol Min
Typ
Max
Units
Conditions
VC Supply
Operating Supply Range (4)
VVC-GND
IVC
VVC-CLM
RVC
4.5
15
13.2
4.2
V
No VC limiting resistors
Normal Operating Condition, No
Faults
Quiescent Current
3.7
mA
VC Clamp Voltage
15.5
16
7.5
4.5
V
Ω
IVC=10mA
VC Clamp Shunt Resistance
VC Under-voltage Rising Threshold
VC Under-voltage Falling Threshold
VC Under-voltage Hysteresis
Internal N-Channel MOSFET
Delta IVC=10mA
VVCUVR
VVCUVF
VVCUV-HS
4.3
4.15
150
V
4.0
8
V
mV
In OFF state, ID=250µA ,
Tj=25°C; Figure 10, page 11
Drain-to-Source Breakdown Voltage
BVDSS
V
Source Current Continuous
Drain Leakage Current
IS
24
10
A
In ON state, Tj=25°C
IDLK
μA
In OFF state, VDS=8V, Tj=25°C
In ON state, IS=20A, Tj=25°C
VC-V(S) ≥ 5V
Drain-to-Source On Resistance
RDSon
Vf-BD
1.5
0.7
2.0
1.0
mΩ
Body Diode Forward Voltage
FAULT
V
In ON state, IS=4A, Tj=25°C
Under-Voltage Rising Threshold
Under-Voltage Falling Threshold
Under-Voltage Threshold Hysteresis
Under-Voltage Bias Current
Over-Voltage Rising Threshold
Over-Voltage Falling Threshold
VUVR
VUVF
VUV-HS
IUV
500
475
25
540
mV
mV
mV
μA
440
-1
1
VOVR
VOVF
500
475
540
mV
mV
440
Picor Corporation • picorpower.com
PI2121
Rev. 1.0 Page 3 of 21
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