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BCM4414BG0F4440T10 参数 Datasheet PDF下载

BCM4414BG0F4440T10图片预览
型号: BCM4414BG0F4440T10
PDF下载: 下载PDF文件 查看货源
内容描述: [DC DC CONVERTER 34V 1.36KW]
分类和应用:
文件页数/大小: 44 页 / 3971 K
品牌: VICOR [ VICOR CORPORATION ]
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BCM4414xG0F4440yzz  
BCM in a VIA Package  
IHI  
ILO  
RLO  
+
+
V•I  
K
K ILO  
K VHI  
+
+
VHI  
VLO  
IHI_Q  
Figure 19 — BCM DC model (Forward Direction)  
The BCM uses a high-frequency resonant tank to move energy  
from the high-voltage side to the low-voltage side and vice  
versa. The resonant LC tank, operated at high frequency, is  
amplitude modulated as a function of the HI-side voltage and  
the LO-side current. A small amount of capacitance embedded  
in the high-voltage-side and low-voltage-side stages of the  
module is sufficient for full functionality and is key to achieving  
high power density.  
The effective DC voltage transformer action provides additional  
interesting attributes. Assuming that RLO = 0Ω and IHI_Q = 0A,  
Equation 3 now becomes Equation 1 and is essentially load  
independent, resistor R is now placed in series with VHI.  
R
The BCM4414xG0F4440yzz can be simplified into the model  
shown in Figure 19.  
BCM  
V
LO
+
K = 1/16  
VHI  
At no load:  
VLO = VHI • K  
(1)  
Figure 20 — K = 1/16 BCM with series HI-side resistor  
The relationship between VHI and VLO becomes:  
V = V – I • R • K  
K represents the “turns ratio” of the BCM.  
Rearranging Equation 1:  
VLO  
K =  
(2)  
(5)  
(
)
LO  
HI  
HI  
VHI  
Substituting the simplified version of Equation 4  
(IHI_Q is assumed = 0A) into Equation 5 yields:  
In the presence of a load, VLO is represented by:  
VLO = VHI • K – ILO • RLO  
(3)  
VLO = VHI • K – ILO • R • K2  
(6)  
and ILO is represented by:  
This is similar in form to Equation 3, where RLO is used to represent  
the characteristic impedance of the BCM. However, in this case a  
real resistor, R, on the high-voltage side of the BCM is effectively  
scaled by K2 with respect to the low-voltage side.  
IHI – IHI_Q  
(4)  
ILO  
=
K
Assuming that R = 1Ω, the effective R as seen from the low-voltage  
side is 3.9mΩ, with K = 1/16.  
RLO represents the impedance of the BCM and is a function of the  
RDS_ON of the HI-side and LO-side MOSFETs, PC board resistance  
of HI-side and LO-side boards and the winding resistance of the  
power transformer. IHI_Q represents the HI-side quiescent current of  
the BCM controller, gate drive circuitry and core losses.  
BCM® in a VIA™ Package  
Page 20 of 44  
Rev 1.7  
10/2020  
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