Si7430DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
0.20
I
D
= 5 A
0.16
10
I
S
- Source Current (A)
T
J
= 150 °C
1
T
J
= 25 °C
0.12
T
J
= 125 °C
0.08
T
J
= 25 °C
0.1
0.01
0.04
0.001
0
0.2
0.4
0.6
0.8
1
1.2
0.00
0
2
4
6
8
10
V
GS
- Gate-to-Source
Voltage
(V)
V
SD
- Source-to-Drain
Voltage
(V)
Source-Drain Diode Forward Voltage
1.0
200
On-Resistance vs. Gate-to-Source Voltage
0.5
160
V
GS(th)
(V)
Po
w
er (
W
)
0.0
I
D
= 5 mA
120
- 0.5
80
- 1.0
40
- 1.5
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
1s
10 s
DC
1000
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 74282
S11-0212-Rev. C, 14-Feb-11
VAISH [ VAISHALI SEMICONDUCTOR ]
