Si7430DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
60
V
GS
= 10
V
thru 7
V
48
I
D
- Drain Current (A)
0.9
36
V
GS
= 6
V
I
D
- Drain Current (A)
T
C
= 125 °C
0.6
1.2
24
T
C
= 25 °C
0.3
T
C
= - 55 °C
12
V
GS
= 5
V
0
0
1
2
3
4
5
0.0
0
2
4
6
8
10
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.055
2000
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.051
C - Capacitance (pF)
1600
C
iss
0.047
V
GS
=
8 V
0.043
V
GS
= 10
V
0.039
1200
800
C
rss
400
C
oss
0.035
0
10
20
30
40
50
60
0
0
20
40
60
80
100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 5 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 75
V
6
V
DS
= 100
V
R
DS(on)
- On-Resistance
(Normalized)
V
DS
= 50
V
2.1
2.5
I
D
= 5 A
Capacitance
V
GS
= 10
V
1.7
4
1.3
V
GS
=
8 V
2
0.9
0
0
6
12
18
24
30
0.5
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74282
S11-0212-Rev. C, 14-Feb-11
www.vishay.com
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