UTC MJE2955T
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTIC
DC current Gain
SATURATION VOLTAGE, V
BE
(sat),
V
CE
(sat) (V)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
V
CE
= -2V
I
C
= 10I
B
V
BE
(sat)
1000
FE
DC CURRENT GAIN, h
100
-1
10
-0.1
V
CE
(sat)
1
-0.01
-0.1
-1
C
-10
(A)
-0.01
-0.1
-1
-10
C
-100
(A)
COLLECTOR CURRENT, I
COLLECTOR CURRENT, I
Safe Operating Area
POWER DISSIPATIOAN, P
C
(W)
Power Derating
105
90
75
60
45
30
15
0
0
25
50
75
100
125
150
175
-100
C
COLLECTOR CURRENT, I
(A)
-10
100
µs
1m
5
s
DC
ms
-1
-0.1
-1
-10
-100
COLLECTOR-EMITTER VOLTAGE, V
CE
(V)
CASE TEMPERATURE, T
C
(
℃
)
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
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presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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2
QW-R203-012,B
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