UTC MJE2955T
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC MJE2955T is designed for general
purpose of amplifier and switching applications.
1
TO-220
1:BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS
( Operating temperature range applies unless otherwise specified )
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Total Power Dissipation(Ta=25°C
)
Collector current
Junction Temperature
Storage Temperature
Base Current
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
IB
RATING
70
60
5
75
10
150
-55 ~ +150
6
UNIT
V
V
V
W
A
°C
°C
A
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-emitter breakdown voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector cut-off current
SYMBOL
BV
CEO
VB
CBO
BV
EBO
I
CBO
I
CEO
I
CEX
I
EBO
V
CE(SAT)1
V
CE(SAT)2
V
BE(ON)
hFE1
hFE2
fT
TEST CONDITIONS
Ic=200mA
Ic=10mA
IE=10mA
V
CB
=70V
V
CE
=30V
V
CE
=70V,V
EB
(off)=1.5V
V
EB
=5V
I
C
=4A,I
B
=0.4A
I
C
=10A,I
B
=3.3A
V
CE
=4V,I
C
=4A
I
C
=4A,V
CE
=4V
I
C
=10A,V
CE
=4V
V
CE
=10V,I
C
=0.5A,f=1MHz
MIN
60
70
5
TYP
MAX
UNIT
V
V
V
mA
µA
mA
mA
V
V
Emitter cut-off current
Collector-emitter saturation voltage
Baser-emitter on voltage
DC current gain
Current gain bandwidth product
20
5
2
1
700
1
5
1.1
8.0
1.8
100
MHZ
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R203-012,B
UTC-IC [ UNISONIC TECHNOLOGIES ]
